The dynamic behaviour of dislocations in heavily impurity-doped crystals was investigated. The suppression of dislocation generation from a surface scratch was found in samples which were doped with B and P to concentrations above 1019/cm3. The critical stress for dislocation generation increased with B and P concentration. This was explained in terms of dislocation locking due to impurity segregation. The velocity of the dislocations in B- and P-doped crystals increased with increasing B or P concentration.

Activities of Dislocations in Heavily Impurity-Doped Si. I.Yonenaga: Journal of Physics - Condensed Matter, 2000, 12[49], 10065-9