The properties of multi-vacancy and multi-interstitial defects which were related to luminescent bands at around 1eV were reviewed. The prominent members of this set were the hexa-vacancy and tri- and tetra- self-interstitial defects. It was suggested that the formation of these defects on dislocation cores could lead to the D1 to D4 photoluminescent bands which were linked to dislocations in Si and SiGe.

Intrinsic Defects and the D1 to D4 Optical Bands Detected in Plastically Deformed Si. R.Jones, B.J.Coomer, J.P.Goss, S.Oberg, P.R.Briddon: Physica Status Solidi B, 2000, 222[1], 133-40