A model was presented which described the kinetic evolution of extrinsic defects during annealing. Ostwald ripening, and the formation energies of extrinsic defects, were incorporated into the model and the latter was compared with experiments on the transient enhanced diffusion of dopants (in conjunction with the dissolution of {113} defects) and the so-called pulsed transient enhanced diffusion which was observed in the case of ultra-low energy implants when the surface acted as a strong sink for Si interstitial atoms. It was shown that a full understanding of the formation and evolution of extended defects led to a correct prediction of dopant-enhanced diffusion under all experimental conditions.

Atomistic Simulations of Extrinsic Defects Evolution and Transient Enhanced Diffusion in Silicon. B.Colombeau, F.Cristiano, A.Altibelli, C.Bonafos, G.Ben Assayag, A.Claverie: Applied Physics Letters, 2001, 78[7], 950-2