The nature of the etch-pits which arose during the anisotropic KOH-etching of {111} surfaces was investigated. It was confirmed that bulk stacking faults in the crystal lattice gave rise to deep etch-pits. Other types of dislocation, whose nature was unclear, were also present. However, these did not give rise to etch-pits.

Etch Pits and Dislocations on Si{111}. A.J.Nijdam, J.G.E.Gardeniers, C.Gui, M.Elwenspoek: Sensors and Actuators A, 2000, 86[3], 238-47