By using time-resolved transient bleaching spectroscopy, the lifetime of the stretch-mode of bond-center H in crystalline material was found to be 7.8ps. The low-temperature spectral width, of the absorption line due to the stretch mode, converged towards its natural width with decreasing H concentration. It almost coincided with the natural width for a H concentration of 1ppm. The lifetimes of the Si-H stretch modes of selected H-related defects were estimated from their spectral widths and were shown to range from 1.6, to more than 37ps.

Vibrational Lifetime of Bond-Centre Hydrogen in Crystalline Silicon. M.Budde, G.Lüpke, C.P.Cheney, N.H.Tolk, L.C.Feldman: Physical Review Letters, 2000, 85[7], 1452-5