By using the radioactive acceptor, 111Ag, in perturbed γγ-angular correlation spectroscopy for the first time, defect complexes which formed with Ag in II-VI semiconductors were investigated. The donors, In and Br, and the Te vacancy were found to passivate Ag acceptors via pair formation. In undoped or Sb-doped material, the perturbed angular correlation data indicated the compensation of Ag acceptors via the formation of double broken bond centres. These were characterized by an electric field gradient having an asymmetry parameter which was close to unity. In addition, a very large electric field gradient was observed and was suggested to be associated with residual impurities.

Defect Complexes Formed with Ag Atoms in CdTe, ZnTe and ZnSe. H.Wolf, T.Filz, V.Ostheimer, J.Hamann, S.Lany, Isolde, T.Wichert: Journal of Crystal Growth, 2000, 214-215, 967-73