Crystals with a single-phase chalcopyrite structure and an homogeneous composition were grown by using a solute diffusion method, with controlled growth rate. The Cu/In ratio appeared to increase with increasing crystal-growth temperature, and approached unity as the Se-source temperature increased. Temperature-dependence results on the Hall effect for n-type and p-type crystals indicated that 0.04 and 0.08eV acceptors were due to Cu on In sites, and In vacancies. An 0.01 to 0.02eV donor was attributed to Se vacancies.

Crystal Growth of CuInSe2 Single Crystals by Synthesis Solute Diffusion Method with Control of the Growth Rate. H.Matsushita, S.Ai, A.Katsui: Journal of Crystal Growth, 2001, 224[1-2], 95-100