The surface migration lengths of As adatoms on (411)A GaAs surfaces during molecular beam epitaxy were deduced for the first time from lateral profiles of the As content in GaAsP layers which were grown onto GaAs channelled substrates by using As4 and P2 beams. The As content on the (411)A side-slope region, near to the edge of the (100) region, increased from that on the flat (411)A GaAs substrate; thus indicating that As adatoms flowed from the (100) region to the (411)A side-slope region. The observed surface migration length of As adatoms was equal to 15μm on the (411)A GaAs surface at 535C. The surface migration length of As adatoms on the (411)A GaAs surface increased slightly, to 20μm, upon increasing the substrate temperature to 605C.

Substrate Temperature Dependence of Surface Migration of As Atoms During Molecular Beam Epitaxy of GaAsP on a (411)A GaAs Substrate. Y.Tatsuoka, M.Uemura, T.Kitada, S.Shimomura, S.Hiyamizu: Journal of Crystal Growth, 2001, 227-228, 266-70