The effect of 1MeV electron irradiation upon the stability of post-implantation defects was investigated. Wafers of n-type material, having a <100> orientation, were implanted with 150keV As+ ions to below the room-temperature amorphization threshold, using an implantation dose of 2 x 1013/cm2 and a constant flux of 0.1μA/cm2. The implanted samples were then irradiated with a scanned beam of 1MeV electrons, to doses ranging from 5 x 1016 to 5 x 1017/cm2 at 320K. Rutherford back-scattering and channelling spectroscopy of 1.7MeV 4He+ ions were used to determine the defect depth-distributions before and after 1MeV irradiation. Results were presented for a so-called oscillatory behaviour of the damage level as a function of 1MeV electron fluence.

Post-Implantation Defect Instability under 1MeV Electron Irradiation of GaAs. S.Warchol, H.Rzewuski, J.Krynicki, R.Grotzschel: Nukleonika, 2000, 45[4], 225-8