Faulted triangular defects on (111) planes, bounded along (110) directions, were shown to develop after annealing in Be-implanted Si-doped material. These defects had not been reported after Be implantation of semi-insulating material, and were thought to be planar Si precipitates. Similar defects had been reported near to highly compensated p-n junction regions, and also in highly Si-doped material. Prismatic parallelogram-shaped loops on (110) planes, comprising excess Ga and As interstitials which were created during implantation and bounded by perfect 90° dislocations along (112) directions, were also identified in implanted samples which were annealed at 500C. These loops were replaced by triangular loops on (110) planes in samples which were annealed at 600C and higher. A model for triangular loop formation was proposed which was based upon differing stabilities of the α-type and β-type 90º dislocations. It was thought that this was the first report of triangular loops on (110) planes in GaAs.

Parallelogram-Shaped and Triangular Defects in GaAs. R.E.Kroon, J.H.Neethling: Physica Status Solidi A, 2000, 182[2], 619-25