An analysis of radiation-enhanced dislocation vibrations led to a tentative model which suggested that the effect was caused by fluctuations in the charge state of point defects which exerted electrostatic forces upon the charged dislocations. Hydrogen plasma-enhanced dislocation glide was studied here. The absence of a H effect upon α-dislocations in n-type material was explained in terms of a soliton model which assumed the existence of strong binding between kinks and H atoms.

Dislocation Motion in Semiconducting Crystals under the Influence of Electronic Perturbations. K.Maeda, K.Suzuki, Y.Yamashita, Y.Mera: Journal of Physics - Condensed Matter, 2000, 12[49], 10079-91