Multiple quantum-well samples were grown by using the molecular-beam epitaxy method, and were irradiated with 239Pu α-particles. The photoluminescence spectra and photoluminescence integrated intensity were determined for α-particle fluences of up to 1011/cm2. The results were in agreement with a model which assumed that point centres (residual impurities and point defects introduced during irradiation) were responsible for a photoluminescence-intensity decrease with α-particle fluence. It was found that the annealing of irradiated multiple quantum-well samples at above 650K almost restored the photoluminescence intensity.

Influence of Alpha Particle Bombardment and Post-Annealing on Photoluminescence from GaAs/Al0.35Ga0.65As Multiple Quantum Wells. J.Kundrotas, A.Dargys, G.Valušis, S.Ašmontas, K.Köhler, C.Leroy: Journal of Applied Physics, 2001, 89[11], 6007-12