The self-annihilation of antiphase boundaries was studied in GaAs epitaxial layers which had been grown, via low-pressure metal-organic vapour-phase epitaxy, onto Ge substrates. Cross-sectional transmission electron microscopy showed that antiphase domain-free GaAs growth on Ge was possible, upon proper selection of the growth parameters. The antiphase boundaries annihilated each other following the growth of a 3μm-thick layer of GaAs on a Ge substrate. Double-crystal X-ray diffraction data revealed a slight compression of the GaAs on Ge, and the full-width at half-maximum decreased with increasing growth temperature. This confirmed that antiphase boundaries annihilated within the GaAs epitaxial films. Low-temperature photoluminescence measurements confirmed the self-annihilation of antiphase boundaries during low-temperature growth, and the generation of antiphase boundaries at higher growth temperatures.

Self-Annihilation of Antiphase Boundaries in GaAs Epilayers on Ge Substrates Grown by Metal-Organic Vapour-Phase Epitaxy. M.K.Hudait, S.B.Krupanidhi: Journal of Applied Physics, 2001, 89[11], 5972-9