The effect of dislocations upon the current-voltage characteristics of Au/Ni/n-GaN Schottky contacts was evaluated. A sub-μm Schottky dot array was formed by means of electron beam lithography, and current-voltage measurements were carried out by using atomic force microscopy and a conductive probe. The data showed that neither dislocations nor steps affected the current-voltage characteristics.

Correlation between Current-Voltage Characteristics and Dislocations for n-GaN Schottky Contacts. K.Shiojima, T.Suemitsu, M.Ogura: Applied Physics Letters, 2001, 78[23], 3636-8