The transient enhanced diffusion of implanted In was studied in the presence of an end-of-range damage layer. In order to investigate the effect of end-of-range defects, samples which had been In-implanted to doses (1013 to 5 x 1014/cm2) that were sufficient to produce an amorphous layer were prepared. Transmission electron microscopy and Rutherford back-scattering spectrometry revealed that the amorphization threshold of In implantation was equal to about 5 x 1013/cm2 for 200keV 115In+ ions which were implanted using a 100μA/cm2 beam current density at room temperature. The results were consistent with Monte Carlo simulations of implantation. The Monte Carlo simulations indicated a deviation, from the plus-one model, due to the mass effect of In. After amorphization, following both rapid thermal annealing at 1000C and furnace annealing at 650 or 850C in a N ambient, the formation of extrinsic end-of-range dislocation loops was detected below the original amorphous/crystalline interface. During this process, a strong segregation of In towards the end-of-range dislocation loops was observed. The profile-shift of In, at a concentration of 1017/cm3, was not proportional to the implanted dose. Because most of the interstitials condensed into end-of-range dislocation loops, the diffusivity enhancement of In was not proportional to implant doses that were above the amorphization threshold.

Effects of End-of-Range Dislocation Loops on Transient Enhanced Diffusion of Indium Implanted in Silicon. T.Noda, S.Odanaka, H.Umimoto: Journal of Applied Physics, 2000, 88[9], 4980-4