Concentration-versus-depth profiles of vacancy and interstitial-type defects were studied in ion-implanted material. The method was based upon deep-level transient spectroscopic measurements in which the filling pulse width was varied. The vacancy profile (represented by vacancy-O centres) and the interstitial profile (represented by substitutional-C plus interstitial-C pairs) were obtained at the same temperature and could be monitored with a high relative depth resolution. In the case of 6MeV 11B ion implantation, the peak of the interstitial profile was displaced by about 0.5μm towards larger depths when compared with the peak of the vacancy profile. This was attributed mainly to the preferential forward momentum of recoiling Si atoms.

Separation of Vacancy and Interstitial Depth Profiles in Ion-Implanted Silicon: Experimental Observation. P.Pellegrino, P.Lévêque, J.Wong-Leung, C.Jagadish, B.G.Svensson: Applied Physics Letters, 2001, 78[22], 3442-4