It was found that dislocations could be generated by fatigue, even at room temperature, and these were investigated by means of transmission electron microscopy. They formed a cluster which was 3μm in diameter, and which emerged from the interface between a Si substrate and a W stud. Most of the dislocations lay on (111) planes. It was noted that cyclic deformation of devices during ultrasonic cleaning could generate such dislocations.

Dislocations in Si Generated by Fatigue at Room Temperature. N.I.Kato, A.Nishikawa, H.Saka: Materials Science in Semiconductor Processing, 2001, 4[1-3], 113-5