The Laplace-transform high-resolution deep-level transient spectroscopic technique, combined with a uniaxial stress method, was used to study the symmetry and reconfiguration kinetics (stress-induced alignment) of some H-related centres. It was confirmed that a trigonal symmetry of the defect was related to isolated bond-centred H. When H decorated the vacancy-O pair (A centre), the apparent defect orthorhombic symmetry was not lowered as a result of a very high H jump-rate between 2 unsaturated broken bonds of the vacancy.

Hydrogen and its Complexes in Silicon. L.Dobaczewski, K.B.Nielsen, K.Goscinski, O.Andersen: Acta Physica Polonica A, 2000, 98[3], 231-9