It was recalled that self-interstitials were generated during the annealing of high-concentration Sb layers in Si. Samples were grown here by using molecular-beam epitaxy. The enhancement or retardation of the diffusion of deep B or Sb marker layers next to a 1.1 x 1020/cm3 Sb box, as well as the formation of Sb precipitates within the box, were monitored for various times and temperatures. It was concluded that interstitials were not associated with precipitate growth, but were generated by the formation of Sb-vacancy complexes, which mainly involved two Sb atoms.

Si Self-Interstitial Injection from Sb Complex Formation in Si. J.Fage-Pedersen, P.Gaiduk, J.Lundsgaard Hansen, A.Nylandsted Larsen: Journal of Applied Physics, 2000, 88[6], 3254-9