The threshold change in the equilibrium vacancy concentration for void-density changes, due to substitutional B and Sb doping, was estimated. Changing the point defect concentration by more than 10% changed the void density. Therefore, the threshold impurity concentration, required to change the void density, was predictable for various dopants. The strain energies for substitutional N, interstitial N pairs and N2V were calculated by using the valence force field model. The role of stress in determining the configuration of N in Si, and the resultant point-defect behavior, were considered.

Modelling of Point Defect Behavior by the Stress Due to Impurity Doping in Growing Silicon. K.Tanahashi, H.Harada, A.Koukitsu, N.Inoue: Journal of Crystal Growth, 2001, 225[2-4], 294-8