The relationship between the rotation effect, and the density of point defects in a crystal, was investigated with regard to a cusp-shaped magnetic Czochralski process. Vacancy and self-interstitial point defects were considered. The parameters studied included the crucible rotation rate (6 to 14rpm) and the crystal rotation rate (10 to 20rpm). It was found that the crucible rotation-rate significantly affected the flow patterns in the melt; thus resulting in a significant change in the density of point defects in the solid. The crystal rotation rate did not have much effect upon the density of point defects.

Numerical Study of the Effect of Operating Parameters on Point Defects in a Silicon Crystal During Czochralski Growth - Rotation Effect. J.S.Kim, T.Lee: Journal of Crystal Growth, 2000, 219[3], 205-17