By taking account of a wide range of recent results which arose from studies of crystal growth and high-temperature wafer heat-treatment, a consistent picture of intrinsic point defect behavior was deduced. Relevant point-defect parameters, such as diffusivities, equilibrium concentrations and interactions of vacancies with O, were deduced. This set of parameters successfully explained a wide range of experimental observations which had been made at temperatures ranging from 900 to 1410C. These experimental observations included the properties of grown-in micro-defects, and vacancy-controlled O precipitation effects in rapidly cooled wafers. It was noted that the analysis of point defect behavior, on the basis of observations of high-temperature phenomena, offered the advantages of simplicity and transparency.

On the Properties of Intrinsic Point Defects in Silicon: a Perspective from Crystal Growth and Wafer Processing. R.Falster, V.V.Voronkov, F.Quast: Physica Status Solidi B, 2000, 222[1], 219-44