Micro-defects in a slowly grown Czochralski crystal were studied by means of short-wavelength synchrotron radiation topography. By comparing the defect images in 2 topographs, taken with Bragg reflections perpendicular and parallel to the growth direction, it was shown that the micro-defects had spherical strain fields. The radial distributions of micro-defect size and density were estimated from the defect images in topographs. The misfit volume of the micro-defects was some 10-12cm3 at the central axis of the crystal ingot, and decreased monotonically towards the periphery of the crystal. The density of micro-defects was about 300/cm3 at the center of the crystal, increased towards the periphery and then decreased rapidly to almost zero in regions within about 7mm of the ingot surface.

Grown-in Micro-Defects in a Slowly Grown Czochralski Silicon Crystal Observed by Synchrotron Radiation Topography. S.Iida, Y.Aoki, Y.Sugita, T.Abe, H.Kawata: Japanese Journal of Applied Physics - 1, 2000, 39[11], 6130-5