The formation energies and equilibrium configurations of self-interstitial {311} defects were determined by means of tight-binding molecular dynamics simulations and by characterizing the lattice strain around the defect complex. From determinations of the atomic stress distribution, it was shown how lattice strain could influence the formation of planar {311} structures.

Lattice-Strain Field Induced by {311} Self-Interstitial Defects in Silicon. P.Alippi, L.Colombo: Physical Review B, 2000, 62[3], 1815-20