Orthorhombic micro-defects which were detected in a monocrystalline sample were analysed on the basis of theoretical simulations which exactly matched experimental X-ray diffuse scattering maps. The mean radius of the micro-defects was estimated to be less than 0.1nm. The symmetry and size of the defects were similar to those found in GaAs. They were suggested to be O precipitates which decorated dislocation loops. Annealing at 750C led to structural recovery and to the dissipation of O atoms.

Orthorhombic Microdefects in Si Crystals. J.Borowski, R.Nietubyć, J.Auleytner, R.Plugaru: Journal of Physics D, 2001, 34[10], 1540-2