The effect of an O partial pressure, during annealing under Ar, upon the generation and growth of defects was investigated by precisely controlling the O partial pressure. It was found that, below a critical O partial pressure of 0.006atm, the generation of oxidation-induced stacking faults during subsequent oxidation was effectively reduced from about 1000 to less than 20/cm2. Annealing (600s) under a suitable O partial pressure was sufficient to annihilate the source of oxidation-induced stacking faults, and this effect continued even during subsequent oxidation in dry O. The mechanism via which the generation of oxidation-induced stacking faults was suppressed was considered with regard to oxidation under a reduced O partial pressures. It was suggested that an electric field, which built up across the oxide layer when the O partial pressure was below the critical value, caused Si interstitials and impurities to drift from the substrate to the outer surface of the oxide. During annealing, sources of oxidation-induced stacking faults (such as Si-O clusters and metallic impurities) were eliminated.

Relation between the Suppression of the Generation of Stacking Faults and the Mechanism of Silicon Oxidation during Annealing under Argon Containing Oxygen. T.Suzuki: Journal of Applied Physics, 2000, 88[2], 1141-8