It was noted that, in N-doped fast-pulled crystals, the N tended to disturb the growth of vacancy clusters by reducing vacancy-rich regions and vacancy concentrations. Thus, oxidation-induced stacking fault rings formed near to the edge region and their width depended upon the N-doping concentration. Vacancy clustering was severely suppressed, and the increased residual vacancy content caused anomalous O precipitation.

Nitrogen-Doping Effect in a Fast-Pulled Cz-Si Single Crystal. B.M.Park, G.H.Seo, G.Kim: Journal of Crystal Growth, 2001, 222[1-2], 74-81