The effect of the heat treatment temperature upon bulk micro-defect and oxidation-induced stacking fault formation in 2 types of heavily B-doped wafer, with and without an oxidation-induced stacking fault ring area, was investigated by comparison with lightly B-doped wafers. The bulk micro-defect density was higher in heavily-doped material, than in lightly-doped material, for a given O concentration. In heavily B-doped samples, unlike lightly B-doped samples, oxidation-induced stacking fault formed over the entire wafer surface - regardless of the oxidation-induced stacking fault ring position - when the heat treatment was carried out at 900C.

Behavior of Thermally Induced Defects in Heavily Boron-Doped Silicon Crystals. J.M.Kim, J.Y.Choi, H.J.Cho, H.W.Lee, H.D.Yoo: Japanese Journal of Applied Physics - 1, 2001, 40[3A], 1370-4