A reconstruction of the form, (100)-c(4 x 8), was created by using a 2-step solid-phase epitaxy technique. Calculations indicated that the reconstruction had a high surface energy (0.4eV per surface atom above 2 x 1). It was proposed that strain-releasing mechanisms played a dominant role within the local energy scatter around the surface energy. Dynamic simulations showed that the system was pushed kinetically into this energy range. Analytical modelling of solid-phase epitaxy revealed a highly non-equilibrium thermodynamic process in which the surface atoms acquired a high kinetic energy by self-overheating, and were trapped in the high-energy state by instant self-quenching.

Si(100)-c(4x8) Reconstruction Formed in a Highly Non-Equilibrium Process. Y.F.Zhao, H.Q.Yang, S.J.Pang: Physical Review B, 2000, 62[12], R7715-8