Compositionally modulated amorphous thin films, with repeat lengths of between 2.5 and 9nm, were prepared by using magnetron sputtering. The interdiffusion coefficient was determined from the change in small-angle X-ray diffraction satellite intensities. The experimental data confirmed a theoretically predicted strong concentration dependence of the interdiffusion coefficient. It was shown that it was possible to determine the concentration dependence of the interdiffusion coefficient from one (curved) decay plot of small-angle X-ray diffraction intensities, as well as from Rutherford back-scattering measurements.

Non-Linearity of Diffusion in Amorphous Si-Ge Multi-Layers. A.Csik, D.L.Beke, G.A.Langer, Z.Erdelyi, L.Daroczi, K.Kapta, M.Kis-Varga: Vacuum, 2001, 61[2-4], 297-301