The diffusion of implanted B in N-doped 4H-samples and in Al-doped 6H-type samples was studied at 1700 to 1800C. The transient enhanced B diffusion which was caused by implantation damage was effectively suppressed by annealing B-implanted samples at 900C before diffusion annealing. The B concentration profiles, as measured by means of secondary ion mass spectrometry, could be explained in terms of a kick-out mechanism. It was concluded that this constituted strong evidence that mainly Si self-interstitials mediated B diffusion.

Diffusion of Boron in Silicon Carbide: Evidence for the Kick-Out Mechanism. H.Bracht, N.A.Stolwijk, M.Laube, G.Pensl: Applied Physics Letters, 2000, 77[20], 3188-90