Channelling of He ions was used to study 3C-type films on a Si/SiO2/Si substrate. The strain-induced angular shift was found to be equal to 0.16º; thus revealing a kink between the SiC and Si layers along the <110> axis. Single crystals of 6H-material were irradiated with various ions, to a range of fluences. The relative disorder on the Si sub-lattice exhibited a sigmoidal dependence upon the dose for all of the ions. Two distinct recovery stages were identified in isochronal and isothermal annealing studies, with activation energies of 0.25 and 1.5eV, respectively. Channelling of D ions was also used to study accumulated disorder on the Si and C sub-lattices simultaneously in 6H-polytype crystals which were irradiated at 100 or 300K.

Ion-Channelling Studies of Interfaces and Defect Properties in Silicon Carbide. W.Jiang, W.J.Weber: Materials Science Forum, 2000, 338-342, 957-60