Epitaxial layers of 6H-type material on a substrate, with an irregular distribution of dislocations having a density of 104 to 105/cm2, were grown by means of vacuum sublimation. Optical and X-ray methods were used to study structural defects in the substrates and epitaxial layers. It was shown that, during layer growth, the structural perfection was improved; as compared with the initial state of the substrate. That is, the dislocation density decreased and fine pores were overgrown. This process became more pronounced with increasing layer thickness.

Structural and Optical Studies of Low-Doped n-6H SiC Layers Grown by Vacuum Sublimation. N.S.Savkina, A.A.Lebedev, A.S.Tregubova, M.P.Scheglov: Materials Science Forum, 2000, 338-342, 509-12