Defect generation, and the kinetics of the initial stages of crystallization were studied. The effect of Si liquid phase upon the transition layer structure was investigated, and micro-pipe stability during the growth process was examined. Large temperature differences (above 100C) in the initial stages of crystallization created a high supersaturation in the vapour phase. As a result, a liquid phase formed at the growth front. Micro-Raman and EDAX analyses confirmed the presence of Si within planar defects and in the bulk crystal close to the seed region. Thermodynamic analyses showed that dislocations with a Burgers vector magnitude of 1.52nm propagated into the bulk crystal without open-core formation. Open cores were expected to be generated from dislocations with a Burgers vector magnitude which was greater than about 6nm.

Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrates with Micropipes. I.Khlebnikov, D.Cherednichenko, Y.Khlebnikov, T.S.Sudarshan: Materials Science Forum, 2000, 338-342, 59-62