Crystal growth was studied via in situ observations, performed using X-ray topographic techniques. Growth was carried out by using a sublimation method (modified Lely). The generation and evolution of defects and dislocations was monitored using real-time topography. Dislocations in the initial growth layer, and typical large defects (micro-pipes, domain boundaries), were investigated. It was shown that it was possible that large defects were introduced via the accumulation of dislocations in the initial growth layer. It was observed that inhomogeneous growth began on parts of the seed surface during initial growth, and created new defects in the growing crystal.

In situ Observation of Silicon Carbide Sublimation Growth by X-Ray Topography. T.Kato, N.Oyanagi, H.Yamaguchi, S.Nishizawa, M.N.Khan, Y.Kitou, K.Arai: Journal of Crystal Growth, 2001, 222[3], 579-85