The fundamental processes which occurred, when SiC was implanted with large doses of N+ and Al+ ions at high substrate temperatures in order to produce buried layers of SiC-AlN, were investigated. The effect of the mechanical stress, which was produced by interstitial clusters, was taken into account by adding a suitable term to the expression for the defect current density in the set of differential equations. Satisfactory agreement was obtained between the simulation results and experimental data. This theoretical treatment permitted the determination of the role of the internal stress field in the evolution of the defect distribution.

Influence of Internal Stress Fields due to Point Defect Clusters upon Interstitial Diffusion in SiC under Irradiation. P.V.Rybin, D.V.Kulikov, Y.V.Trushin, J.Petzoldt, R.A.Yankov: Proceedings of the SPIE, 2000, 4064, 301-7