Positron annihilation was used to detect vacancy-related defects in proton-implanted and smart cut 6H-type material. Measurements of the positron-electron pair momentum distribution as a function of depth showed that vacancy-related defects which were produced along the proton track, and cavities which formed in the region of the H peak, survived even after 1300C annealing.

Positron Annihilation at Proton-Induced Defects in 6H-SiC/SiC and 6H-SiC/SiO2/Si Structures. M.F.Barthe, L.Henry, C.Corbel, G.Blondiaux, K.Saarinen, P.Hautojärvi, E.Hugonnard, L.Di Cioccio, F.Letertre, B.Ghyselen: Physical Review B, 2000, 62[24], 16638-44