The Raman spectra of 6H-type crystals which contained stacking faults were examined, on the c-face, using the back-scattering geometry. The intensity of the transverse optical phonon band at 796/cm, which corresponded to the phonon mode at the Γ-point in 3C-type material, was sensitive to stacking faults. It was found that the intensity of this band depended upon the stacking-fault density. This was explained in terms of the bond polarizability model. The spatial distribution of the stacking faults was studied by means of Raman image measurement.

Detection of Stacking Faults in 6H-SiC by Raman Scattering. S.Nakashima, Y.Nakatake, H.Harima, M.Katsuno, N.Ohtani: Applied Physics Letters, 2000, 77[22], 3612-4