It was discovered, for the first time, that deep levels in n-type 3C-SiC/Si were passivated by H. The H was introduced by plasma treatment, and its effects were investigated by means of deep level transient spectroscopy. The 3C-type SiC, which was grown onto Si by using silane and propane, exhibited a deep level with an activation energy of 0.3eV. This defect was passivated by H, and was mostly reactivated by annealing at temperatures above 500C. The plasma treatment formed new deep levels in the near-surface region of the sample. Although these levels almost annealed out at 400C, various types of deep level appeared after annealing in the near-surface region. The concentration was below 1014/cm3 for annealing at 400C, and rapidly increased with increasing annealing temperature; up to 600C. Thus, the concentration of deep levels in 3C-type SiC was decreased by H plasma treatment, and subsequent annealing at 400C, without introducing high densities of plasma-induced deep levels.

Passivation of Deep Levels in 3C-SiC on Si by Hydrogen Plasma Treatment. M.Kato, F.Sobue, M.Ichimura, E.Arai, N.Yamada, Y.Tokuda, T.Okumura: Japanese Journal of Applied Physics - 1, 2001, 40[4B], 2983-6