Carbide nano-crystallites were formed via the reaction of C60 molecules with Si atoms, on Si(001) and Si(111) surfaces, at 900 to 1150C. The surface morphologies and structures of the cubic β-SiC islands were investigated in situ by using scanning tunnelling microscopy. Distinctive atomic structures were formed on the surfaces of the SiC crystallites, such as (2 x 3) on SiC(001) and (2v3 x 2v3)R30° on SiC(111).

Self-Assembled Growth of Cubic Silicon Carbide Nano-Islands on Silicon. J.Yang, X.Wang, G.Zhai, N.Cue, X.Wang: Journal of Crystal Growth, 2001, 224[1-2], 83-8