Heavily impurity-doped (B, Ga, P) Czochralski single crystals, with Si contents ranging from 80 to 100at%Si, were grown. Single crystals with diameters and lengths of more than 25mm and 40mm, respectively, were obtained in which the composition varied from 85 to 100at%Si in the growth direction. Grown-in dislocations were observed, via X-ray topography, to be generated at the seed/crystal interface and at the crystal periphery.

Czochralski Growth of Heavily Impurity Doped Crystals of GeSi Alloys. I.Yonenaga: Journal of Crystal Growth, 2001, 226[1], 47-51