The surface reaction of SiGe was studied during growth using SiH4 and GeH4 in an ultra-high vacuum chemical vapour deposition system. The saturated adsorption and desorption of SiH4 from the Si(100) surface was investigated, and it was found that all of the four H atoms of one SiH4 molecule were adsorbed at the Si surface. It followed that the dissociated adsorption ratio was proportional to the 4th power of the surface vacancy concentration.

A Surface Kinetics Model for the Growth of SiGe by UHV/CVD Using SiH4/GeH4. Z.Yu, D.Li, B.Cheng, C.Huang, Z.Lei, J.Yu, Q.Wang, J.Liang: Journal of Crystal Growth, 2000, 218[2-4], 245-9