A set of evolution equations was presented whose key feature was the incorporation of dislocation interactions, into the kinetic processes, via a resistance term. The resistance to threading dislocation gliding was characterized by using a hardening function which depended only upon the relaxed plastic strain. The evolution equations were tested on GeSi/Si(100). The evolution equations successfully reproduced a wide range of experimental data on strain relaxation in GeSi/Si heterostructures.

Dislocation Dynamics of Strain Relaxation in Epitaxial Layers. T.C.Wang, Y.W.Zhang, S.J.Chua: Journal of Applied Physics, 2001, 89[11], 6069-72