A dissociated 60º misfit dislocation at the substrate interface of a heterojunction was studied by using electron energy loss spectroscopy and annular dark-field imaging. New spectra were obtained from the intrinsic stacking fault, from the dislocation cores, and from the strained regions on each side of the stacking fault. In-gap states were identified at partial dislocation cores. The images resembled accepted structures; except at the 90° partial dislocation.

Structural and Electronic Characterization of a Dissociated 60° Dislocation in GeSi. P.E.Batson: Physical Review B, 2000, 61[24], 16633-41