A review was presented of recent experimental investigations of dopant diffusion and the characterization of electrically active defect complexes in strained and relaxed epitaxial SiGe/Si heterostructures. The topics considered included Sb and P diffusion, the properties of divacancy and P-vacancy complexes and thermal donor generation. High-resolution X-ray diffraction, secondary ion mass spectrometry, deep-level transient spectroscopy, admittance spectroscopy and thermally stimulated capacitance techniques were used for relaxation control, tracer profiling, deep-level and shallow-level characterization.

Dopant Redistribution and Formation of Electrically Active Complexes in SiGe. A.Y.Kuznetsov, J.S.Christensen, E.V.Monakhov, A.C.Lindgren, H.H.Radamson, A.Nylandsted Larsen, B.G.Svensson: Materials Science in Semiconductor Processing, 2001, 4[1-3], 217-23