The effect of rapid thermal annealing upon the properties of SiN1.55 films was studied. The films were deposited, at room temperature, from N2 and SiH4 gas mixtures, by using electron cyclotron resonance techniques. The films were characterized by means of Fourier transform infra-red spectroscopy and electron paramagnetic resonance spectroscopy. The greatest structural order was found for an annealing temperature of 900C. At higher temperatures, there was a significant release of H from N-H bonds, without any subsequent Si-N bond healing. This resulted in a degradation of the structural properties of the film. A minimum in the defect density was observed for an annealing temperature of 600C. The behavior of the defect density was governed by the presence of non-bonded H and Si-H bonds below the infra-red detection limit.

Rapid Thermal Annealing Effects on the Structural Properties and Density of Defects in SiO2 and SiNx:H Films Deposited by Electron Cyclotron Resonance. E.San Andrés, A.Del Prado, F.L.Martínez, I.Mártil, D.Bravo, F.J.López: Journal of Applied Physics, 2000, 87[3], 1187-92