The properties of ZnSSe/(100)GaAs structures were studied. The ZnSSe was grown by means of metal-organic vapour-phase epitaxy. Double-crystal X-ray diffraction patterns in the vicinity of the (400) reciprocal lattice points were studied. The lineshapes of the patterns were analysed by using a statistical X-ray diffraction theory, and the kinematic approximation, in order to determine the epilayer structure. It was noted that ZnSSe layers, which had similarly small tensile lattice mismatches to those of ZnSe, had a poorer crystalline quality. This was in accord with the higher defect density which was expected for ZnSSe.

Crystalline Structure of ZnSe and ZnSSe Epilayers Grown on (100)GaAs by Metalorganic Vapour-Phase Epitaxy. N.Lovergine, P.Prete, L.Tapfer, A.M.Mancini: Journal of Crystal Growth, 2000, 214-215, 187-91