Single crystals which were 30mm in diameter and some 20mm in length were grown by using the semi-open free-growth physical vapour transport method. An area, in which the dislocation density was less than 104/cm2, made up more than 90% of the (100) substrate. The latter were Al-diffused by annealing, and the resultant Al concentration in the region between the surface and a depth of 400μm was higher than 4 x 1018/cm3. The dislocation density had not increased after Al diffusion, and remained below 104/cm2. The full-width at half maximum of the X-ray rocking curve was kept below 10arcsec.

Al-Diffused Conductive ZnSe Substrates Grown by Physical Vapour Transport Method. Y.Namikawa, S.Fujiwara, T.Kotani: Journal of Crystal Growth, 2001, 229[1], 92-7