The lattice site of implanted 12N in semi-insulating material was investigated by means of β radiation-detected nuclear magnetic resonance. After room-temperature implantation, only a small fraction of the N was found at sites with full Td symmetry. This fraction was attributed to substitutional NSe. The population of this site increased above 500K, and saturated at a 10-times higher value for temperatures above 950K. This increase was attributed to a change from interstitial Ni, which was isolated or part of a complex, to unperturbed NSe. An activation barrier of 0.47eV was deduced to be associated with this process; which represented an upper limit for the Ni migration energy. No configurations were observed in which NSe was bound to a diamagnetic partner such as the (VSe-Zn-NSe)+ complex.

Defect Properties of Ion-Implanted Nitrogen in ZnSe. K.Marbach, B.Ittermann, M.Füllgrabe, M.Heemeier, F.Kroll, F.Mai, P.Meier, D.Peters, H.Thiess, H.Ackermann, H.J.Stöckmann, W.D.Zeitz, H.Wenisch, D.Hommel, G.Landwehr: Physical Review B, 2001, 63[24], 241201 (4pp)