Single crystals, with a diameter of 12mm and a length of 28mm, were grown by using the chemical vapour transport method; with I as a transport agent. The ampoule wall was in direct contact with the crystal during growth, and was made of pBN. The seed crystal was a chemical vapour transport-grown monocrystal with a dislocation density of less than 104/cm2. The seed was protected from thermal stress by inserting undoped polycrystalline ZnSe between the back of the seed crystal and the ampoule end-wall. The dislocation density of the grown ZnSe crystal was less than 104/cm2; even near to the seed crystal. It became equal to zero in the tail of the crystal. Shallow pits were found on the etched surface of the dislocation-free portion.

Growth of Dislocation-Free ZnSe Single Crystal by CVT Method. S.Fujiwara, Y.Namikawa, M.Irikura, K.Matsumoto, T.Kotani, T.Nakamura: Journal of Crystal Growth, 2000, 219[4], 353-60